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参数资料
| 型号： | FDW2502PZ |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 4400 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封装： | TSSOP-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 451K |
| 代理商： | FDW2502PZ |
FDW2502P Rev. C1 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–17
mV/
°
C
V
DS
= –16 V,
V
GS
= –12 V,
V
GS
= 12 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
μ
A
nA
nA
–100
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
μ
A
–0.4
-1.0
–1.5
V
I
D
= –250
μ
A, Referenced to 25
°
C
3.1
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –4.5 V, I
D
= –4.4 ,T
J
=125
°
C
V
GS
= –2.5 V,
V
GS
= –4.5 V,
V
DS
= –5 V,
I
D
= –4.4 A
I
D
= –3.3 A
V
DS
= –5 V
I
D
= –4.4 A
0.028
0.039
0.043
0.035
0.056
0.057
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–30
A
S
17
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1330
552
153
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
12
19
60
37
25
40
100
70
ns
ns
ns
ns
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
14
3.0
3.9
20
nC
nC
nC
V
DS
= –5 V,
V
GS
= –4.5 V
I
D
= –4.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–0.83
A
V
SD
V
GS
= 0 V,
I
S
= –0.83 A
(Note 2)
-0.7
–1.2
V
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 125
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 208
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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