- 您现在的位置：买卖IC网 > PDF目录375788 > FDZ7064N (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel Logic Level PowerTrench BGA MOSFET PDF资料下载
参数资料
| 型号： | FDZ7064N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel Logic Level PowerTrench BGA MOSFET |
| 中文描述： | 13.5 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ULTRA THIN, BGA-30 |
| 文件页数： | 4/6页 |
| 文件大小： | 186K |
| 代理商： | FDZ7064N |
FDZ7064N Rev D4 (W)
Typical Characteristics
0
10
20
30
40
50
60
0
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
I
D
,
3.0V
4.5V
2.5V
2.0V
V
GS
= 10V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
I
D
, DRAIN CURRENT (A)
30
40
50
60
R
D
,
D
V
GS
= 2.5V
3.5V
3.0V
10V
4.5V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 13.5A
V
GS
= 10V
0.002
0.006
0.01
0.014
0.018
0.022
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
=6.8 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
2.5
3
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDZ7064S | TERMINAL |
| FDZ7296 | 30V N-Channel PowerTrench BGA MOSFET |
| FE3C | GLASS PASSIVATED FAST EFFICIENT RECTIFIER |
| FE5A | Glass Passivated Fast Efficient Rectifier(钝化玻璃快速效应整流器) |
| FE5B | Glass Passivated Fast Efficient Rectifier(钝化玻璃快速效应整流器) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDZ7064N_Q | 功能描述:MOSFET 30V N-Ch BGa MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ7064S | 功能描述:MOSFET 30V/12V NCh SYNCFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ7296 | 功能描述:MOSFET 30V N-Ch PowerTrench BGA MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZX2-S4/4 | 制造商:Cooper Bussmann 功能描述:ADAPTR KIT FOR FD800 制造商:COOPER BUSSMANN 功能描述:ADAPTER KIT FOR FD800 |
| FDZX2-S4-4 | 制造商:Cooper Bussmann 功能描述:ADAPTER KIT FOR FD800 - Bulk |
发布紧急采购，3分钟左右您将得到回复。