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参数资料
| 型号： | FEP6DTHE3/45 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 140K |
| 描述： | DIODE 6A 200V 35NS DUAL TO220-3 |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 975mV @ 3A |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 6A |
| 电压 - (Vr)（最大）： | 200V |
| 反向恢复时间(trr)： | 35ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
FEP(F,B)6AT thru FEP(F,B)6DT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88598
Revision: 07-Nov-07
2
Note:
(1) Pulse test: 300
μs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT UNIT
Maximum instantaneous forward voltage
per diode (1)
3.0 A VF
0.975 V
Maximum DC reverse current at rated DC
blocking voltage per diode
TC
= 25 °C
TC
= 100 °C
IR
5.0
50
μA
Maximum reverse recovery time per diode
IF
= 0.5 A, I
R
= 1.0 A,
Irr
= 0.25 A
trr
35 ns
Typical junction capacitance per diode 4.0 V, 1 MHz CJ
28 pF
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FEP6 FEPF6 FEPB6 UNIT
Typical thermal resistance from junction to case per diode RθJC
3.6 5.1 3.6 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB FEP6DT-E3/45 1.81 45 50/tube Tube
ITO-220AB FEPF6DT-E3/45 1.97 45 50/tube Tube
TO-263AB FEPB6DT-E3/45 1.33 45 50/tube Tube
TO-263AB FEPB6DT-E3/81 1.33 81 800/reel Tape and reel
TO-220AB FEP6DTHE3/45
(1)
1.81 45 50/tube Tube
ITO-220AB FEPF6DTHE3/45
(1)
1.97 45 50/tube Tube
TO-263AB FEPB6DTHE3/45
(1)
1.33 45 50/tube Tube
TO-263AB FEPB6DTHE3/81
(1)
1.33 81 800/reel Tape and reel
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