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参数资料
| 型号： | FEP6DTHE3/45 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 140K |
| 描述： | DIODE 6A 200V 35NS DUAL TO220-3 |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 975mV @ 3A |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 6A |
| 电压 - (Vr)（最大）： | 200V |
| 反向恢复时间(trr)： | 35ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
FEP(F,B)6AT thru FEP(F,B)6DT
Vishay General Semiconductor
Document Number: 88598
Revision: 07-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
6
8
10
0 100 125 15075
50
25
4
2
Resistive or Inductive Load
A
v
erage For
w
ard Re
ctified C
u
rrent (A)
Case Temperature (°C)
0
50
1 10010
40
30
20
80
70
60
10
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
0.4 0.6 0.8
1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.1
10
100
1
Instantaneo
u
s For
w
ard C
u
rrent (A)
1.8
TJ
= 125 °C
TJ
= 25 °C
Pulse Width = 300 μs
1 %
D
uty Cycle
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
0 10060
80
40
20
0.01
0.1
10
1
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse Leakage
C
u
rrent (
μ
A)
TJ
= 100 °C
TJ
= 125 °C
TJ
= 25 °C
Reverse Voltage (V)
J
u
nction Capacitance (pF)
0.1 101 100
30
20
10
40
50
60
0
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
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