参数资料
型号: FESB8BT-E3/45
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 133K
描述: DIODE 8A 100V 35NS SGL TO263AB
标准包装: 1,000
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 8A
电压 - 在 If 时为正向 (Vf)(最大): 950mV @ 8A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 10µA @ 100V
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 管件
‘? _ FES8xT, FESF8xT, FEsB8xT7 www'V'Shay'C°m Vishay General SemiconductorUltrafast Plastic Rectifier
To.22oAc lTo.z2oAc FE“T"“Es
/ \\ ' Power pack
' Ultrafast recovery time
Low switching losses, high efficiency
RoHsLow leakage current c°MPL|ANT
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
. Glass passivated chip junction @
FESEXT FESFEXT
PIN‘ FlNl 245 °C (for TO-263AB package)
..N.:$:eE ,,.:j . Some. dip 275 cc max. 10 5 per JESD 22.3106
To-z63AB (for TO?220AC and |TO?220AC package)
’ I AEC>Q101 qualified
- Material categorization: For definitions of compliance
please see www.vishay.ccm/doc?99912
WPICAL APPLIcATIoNs
FEsB8xT For use in high frequency rectifier of switching mode powerPW‘ : KO Supplies, inverters, freewheeling diodes, DC/DC converters,
PM HEATSINK and other power switching application.
PRIMARY cHARAcTERIs Ics MEcHAN'cAL DATACase: TO-22OAC, ITO-220AC, TO-263ABn Base P/N_E3 _ RoHS_Comp|iant) Commercial grademm Base P/NHE3 . ROHS-compliant, AEC-Q101 qualifiedMolding compound meets UL 94V—0 flammability rating
Terminals: Matte tin plated leads. eolderable per
' ’ ' ’ ' J-STD?002 and JESD22-B102
E3 Suffix meets JESD 201 class 1A whisker test, HES SuffixTO-22(;;(\)§éfI3T3(2\-Ef20ACY meets JESD 201 class 2 whisker test
Polarity: As marked
Single die
Mounting Torque: 10 in-lbs max.
MAXIMUM RATmGs (To = 25 °C unless othenlilse noted)
PARAMETER
Max. repetitive peak reverse voltage
Max RMS voltage
Max. DC blocking voltage
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating storage and temperature range
Isolation voltage (ITo—220AC only)from terminal to neatsinkt : 1 min
-55to+ 150
Max. average fonlvard rectified current
at TC : 100 "C
Revision: 20-Aug-13 1 Document Number: 88600
For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.eomzdoc?9100!!
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