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参数资料
| 型号： | FFB3906 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PNP Multi-Chip General Purpose Amplifier |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 6 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 81K |
| 代理商： | FFB3906 |
F
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
BL
Base Cutoff Current
I
CEX
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain *
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
I
C
= 1.0 mA, I
B
= 0
40
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30 V, V
BE
= 3.0 V
V
CE
= 30 V, V
BE
= 3.0 V
40
5.0
V
V
nA
nA
50
50
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
60
80
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
0.25
0.4
0.85
0.95
V
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
0.65
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
V
EB
= 0.5 V, I
C
= 0,
f = 100 kHz
I
C
= 100
μ
A, V
CE
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
450
MHz
C
obo
Output Capacitance
3.0
pF
C
ibo
Input Capacitance
8.0
pF
NF
Noise Figure
(except MMPQ3906)
2.5
dB
V
CC
= 3.0 V, V
BE
= 0.5 V,
I
C
= 10 mA, I
B1
= 1.0 mA
V
CC
= 3.0 V, I
C
= 10mA
I
B1
= I
B2
= 1.0 mA
15
20
110
40
ns
ns
ns
ns
PNP Multi-Chip General Purpose Amplifier
(continued)
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FFB3906 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP 40V 0.2A SC70-6 |
| FFB3906 | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR |
| FFB3906_Q | 功能描述:两极晶体管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FFB3946 | 功能描述:两极晶体管 - BJT NPN & PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FFB44-5230--A | 制造商:AVX Corporation 功能描述:CASP FILM 47UF 100V 10% 31.1 X 20.8 X 31.3 - Bulk |
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