参数资料
型号: FFPF08S60STU
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 817K
描述: IC DIODE STEALTH 600V TO220F-2
产品目录绘图: Power Diode Circuit
标准包装: 50
系列: STEALTH™ II
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 8A
电压 - 在 If 时为正向 (Vf)(最大): 2.6V @ 8A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 30ns
电流 - 在 Vr 时反向漏电: 100µA @ 600V
安装类型: 通孔
封装/外壳: TO-220-2 全封装,隔离接片
供应商设备封装: TO-220F
包装: 管件
产品目录页面: 1614 (CN2011-ZH PDF)
1
www.fairchildsemi.com
?2007
Fairchild Semiconductor
Cor
poration
FFPF08S60S Rev.
C1
FFPF08S60S
STEALTH? II Diode
FFPF08S60S
Features
?
Stealth Recovery trr
=
30
ns (@ IF
=
8 A)
?
Max Forward Voltage, VF
= 3.4 V (@ T
C
= 25°C)
?
600
V Reverse Voltage and High Reliability
Applications
? General Purpose
?
SMPS
?
Boost Diode in Continuous Mode Power
Factor Corrections
?
Power Switching Circuits
8 A, 600 V, STEALTH? II Diode
The FFPF08S60S is STEALTH? II diode with soft recovery
characteristics. It is silicon nitride passivated ion-implanted
epitaxial planar construction. This device is intended for use as
freewheeling of boost diode in switching power supplies and
other power swithching applications. Their low stored charge and
hyperfast soft recovery minimize ringing and electrical noise in
many power switching circuits reducing power loss in the
switching transistors.
Pin Assignments
Absolute Maximum Ratings
TC
= 25°C unless otherwise noted
Thermal Characteristics
TC
= 25°C unless otherwise noted
Package Marking and Ordering
Information
1. Cathode 2. Anode
TO-220F-2L
1
1. Cathode 2. Anode
2
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current @ TC
= 95
°C8A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
80
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Symbol
Parameter
Max
Unit
RθJC
Maximum Thermal Resistance, Junction to Case
3.4
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
F08S60S FFPF08S60STU TO-220F-2L
-
-
50
?
RoHS Compliant
Description
November
2013
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