参数资料
型号: FFPF20UA60DN
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 242K
描述: DIODE 600V 10A TO-220FP
标准包装: 50
电压 - 在 If 时为正向 (Vf)(最大): 2.3V @ 10A
电流 - 在 Vr 时反向漏电: 100µA @ 600V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 600V
反向恢复时间(trr): 120ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
November 2013
FFPF20UA60DN
Ultrafast II Dual Diode
?2010 Fairchild Semiconductor Corporation
FFPF20UA60DN Rev. C1
www.fairchildsemi.com
1
FFPF20UA60DN
20 A, 600 V, Ultrafast II Dual Diode
Features
? Ultrafast Recovery trr
= 120 ns (@ I
F
= 10 A)
? Max Forward Voltage, VF
= 2.3 V (@ T
C
= 25°C)
? 600 V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? RoHS Compliant
Applications
? Boost Diode in PFC and SMPS
Description
The FFPF20UA60DN is an ultrafast ll dual diode with low forward
voltage drop and rugged UIS capability. This device is intended
for use as freewheeling and clamping diodes in a variety of
switching power supplies and other power switching applications.
It is specially suited for use in switching power supplies and
industrial applications as welder and UPS application.
Absolute Maximum Ratings
TC = 25oC unless otherwise noted
Thermal Characteristics TC = 25oC unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Rating Unit
VRRM
Peak Repetitive Reverse Voltage 600 V
VRWM
Working Peak Reverse Voltage 600 V
VR
DC Blocking Voltage 600 V
IF(AV)
Average Rectified Forward Current @ TC
= 25
oC 10 A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
50 A
TJ, TSTG
Operating and Storage Temperature Range -65 to +150
oC
Symbol Parameter Max. Unit
R?JC
Maximum Thermal Resistance, Junction to Case 6.3
oC/W
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFPF20UA60DN FFPF20UA60DN TO-220F Tube N/A N/A
50
TO-220F
1
2
3
1. Anode 2. Cathode 3. Anode
1
2
3
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