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参数资料
| 型号： | FGB20N6S2DT |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 232K |
| 代理商： | FGB20N6S2DT |
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
20N6S2D
20N6S2D
20N6S2D
20N6S2D
Device
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800 units
FGH20N6S2D
FGP20N6S2D
FGB20N6S2D
FGB20N6S2DT
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
C
= 250
μ
A, V
GE
= 0
V
CE
= 600V
600
-
-
-
-
-
-
-
-
V
μ
A
mA
nA
T
J
= 25
°
C
T
J
= 125
°
C
250
2.0
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
I
C
= 7.0A,
V
GE
= 15V
I
EC
= 7.0A
T
J
= 25
°
C
T
J
= 125
°
C
-
-
-
2.2
1.9
1.9
2.7
2.2
2.7
V
V
V
V
EC
Diode Forward Voltage
I
C
= 7.0A,
V
CE
= 300V
I
C
= 250
μ
A, V
CE
= 600V
I
C
= 7.0A, V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
30
38
4.3
6.5
36
45
5.0
8.0
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
3.5
-
T
J
= 150
°
C, R
G
= 25
,
V
GE
=
15V, L = 0.5mH V
CE
= 600V
IGBT and Diode at T
J
= 25
°
C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 26
35
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
rr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Diode Reverse Recovery Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.7
4.5
87
50
25
85
58
7
4.5
120
85
20
125
135
26
20
-
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
75
-
-
145
105
-
140
180
31
24
IGBT and Diode at T
J
= 125
°
C
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 26
I
EC
= 7A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
Diode
-
-
1.0
2.2
°
C/W
°
C/W
NOTE:
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
相关PDF资料 |
PDF描述 |
|---|---|
| FGH20N6S2 | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| FGP20N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGB20N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGH30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGP30N6S2D | Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGB20N6S2T | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGB3040CS | 功能描述:马达/运动/点火控制器和驱动器 IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| FGB3040CS_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT |
| FGB30N6S2 | 功能描述:IGBT 晶体管 Sgl 600V Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGB30N6S2D | 功能描述:IGBT 晶体管 Dl 600V Size 3 N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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