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参数资料
| 型号： | FGH20N6S2 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 183K |
| 代理商： | FGH20N6S2 |
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
5
0
10
25
75
100
125
150
30
20
15
25
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
20
30
15
40
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 500
μ
H
5
10
35
25
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
400
20
10
700
100
T
J
= 125
o
C, R
G
= 25
, L = 500
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 15V
T
C =
75
o
C
V
GE
= 10V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
10
6
90
150
13
14
12
8
60
120
180
210
10
15
4
2
t
SC
I
SC
V
CE
= 390V, R
G
= 25
, T
J
= 125
o
C
0.50
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
1.25
2.0
2.25
8
6
14
T
J
= 25
o
C
0.75
T
J
= 150
o
C
12
1.5
1.75
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
T
J
= 125
o
C
10
2.5
2.75
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0.50
1.0
1.5
2.0
2.5
0.75
T
J
= 150
o
C
1.75
1.25
T
J
= 25
o
C
2.25
0
2
4
8
6
14
12
10
T
J
= 125
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
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