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参数资料
型号： FGH20N6S2
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： IGBT 晶体管
英文描述： Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-247
封装： TO-247, 3 PIN
文件页数： 4/8页
文件大小： 183K
代理商： FGH20N6S2
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
(Continued)
E
O
,
μ
J
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
2
4
6
8
10
14
0
300
250
350
50
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
12
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
E
O
μ
J
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
2
4
6
8
10
14
0
12
150
100
200
0
350
300
250
50
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
6
7
8
9
10
2
4
6
8
10
14
0
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
11
12
13
12
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
2
4
6
8
10
14
0
12
0
5
10
15
20
25
30
35
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
80
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
140
120
100
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
2
4
6
8
10
14
0
12
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
T
J
= 25
o
C, V
GE
= 10V or 15V
T
J
= 125
o
C, V
GE
= 10V or 15V
2
4
6
8
10
14
0
12
60
40
120
100
80
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
相关PDF资料
PDF描述
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
FGB20N6S2 600V, SMPS II Series N-Channel IGBT
FGH30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP30N6S2D Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
相关代理商/技术参数
参数描述
FGH20N6S2D 功能描述:IGBT 晶体管 Comp N-Ch 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FGH25N120FTDS 功能描述:IGBT 晶体管 1200V 25A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FGH25T120SMD_F155 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 25A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 25A FS2 TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 50A 428W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 25A FS2 Trench IGBT
FGH30N120FTD 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Field stop trench technology
FGH30N120FTDTU 功能描述:IGBT 晶体管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
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