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参数资料
| 型号： | FGH20N6S2D |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 232K |
| 代理商： | FGH20N6S2D |
2002 Fairchild Semiconductor Corporation
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Package
Features
100kHz Operation at 390V, 7A
200kHZ Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . .85ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Low Conduction Loss
Low E
on
Soft Recovery Diode
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
Parameter
Ratings
600
28
13
40
±20
±30
35A at 600V
100
125
1.0
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
A
mJ
W
W/°C
°C
°C
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
T
J
T
STG
TO-263AB
TO-220AB
E
C
G
E
G
TO-247
E
C
G
Symbol
COLLECTOR (FLANGE)
C
E
G
相关PDF资料 |
PDF描述 |
|---|---|
| FGB20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGP20N6S2D | Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes |
| FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH20N6S2 | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| FGP20N6S2 | 600V, SMPS II Series N-Channel IGBT |
相关代理商/技术参数 |
参数描述 |
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| FGH25N120FTDS | 功能描述:IGBT 晶体管 1200V 25A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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| FGH30N120FTD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Field stop trench technology |
| FGH30N120FTDTU | 功能描述:IGBT 晶体管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH30N60LSD | 功能描述:IGBT 晶体管 1.1V 30A High Speed RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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