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参数资料
| 型号： | FGH20N6S2D |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 232K |
| 代理商： | FGH20N6S2D |
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves
(Continued)
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
2
25
o
C
125
o
C
14
8
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
3.0
4
6
12
10
200
100
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
14
4
2
125
o
C t
a
125
o
C t
b
, t
rr
12
8
10
6
dI
EC
/dt = 200A/
μ
s, V
CE
= 390V
50
150
250
25
o
C t
b
, t
rr
25
o
t
a
25
o
C t
b
I
EC
= 7A, V
CE
= 390V
t
a
,
b
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
40
0
60
80
100
160
20
1000
200
300
600
400
500
125
o
C t
b
125
o
C t
a
25
o
C t
a
140
120
700
800
900
250
200
150
100
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
300
500
125
o
C, I
EC
= 7A
125
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 7A
V
CE
= 390V
350
1000
200
300
600
400
500
700
800
900
450
400
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3.0
5.0
4.5
6.0
5.5
I
EC
= 3.5A
S
4.0
3.5
1000
200
300
600
400
500
700
800
900
I
EC
= 7A
V
CE
= 390V, T
J
= 125
°
C
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3
5
4
10
6
I
EC
= 7A
I
EC
= 3.5A
I
7
V
CE
= 390V, T
J
= 125
°
C
9
8
1000
200
300
600
400
500
700
800
900
相关PDF资料 |
PDF描述 |
|---|---|
| FGB20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGP20N6S2D | Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes |
| FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH20N6S2 | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| FGP20N6S2 | 600V, SMPS II Series N-Channel IGBT |
相关代理商/技术参数 |
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|---|---|
| FGH25N120FTDS | 功能描述:IGBT 晶体管 1200V 25A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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| FGH30N120FTD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Field stop trench technology |
| FGH30N120FTDTU | 功能描述:IGBT 晶体管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH30N60LSD | 功能描述:IGBT 晶体管 1.1V 30A High Speed RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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