参数资料
型号: FGP10DHE3/73
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 66K
描述: DIODE 1A 200V 35NS SMC
标准包装: 3,000
系列: SUPERECTIFIER®
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 950mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 2µA @ 200V
电容@ Vr, F: 25pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 带盒(TB)
‘? I FGP10B, FGP10C, FGP10D7 Www'V'Shay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER
Maximum instantaneousforward voltage
Maximum DC reverse Current at rated DC
blocking voltage TA: 100 ccIF: _5A,IR:1_0A,
I":0.25A
Typical junction capacitance 4.0 V, 1 MHZ
Note
(i) Pulse test: 300 us pulse Width, 1 % duty Cycle
Maximum reverse recovery time
THERMAL cHARAcTEnIsTIcs (TA = 25 00 unless otherwise noted)
PARAMETER
R (1)
Maximum thermal resistance
Note
ii) Units mounted on PCB 10 mm x10 mm copper pads
PREFERRED P/N
FGP1oD—Ea/54 Z1
FGP1oD—Ea/73 3;WWW“) ZéFGP1oDHEa/73-1? m
N ate
ii) AEC-Q101 qumnied
RATINGS AND cHARAcTERIsTIcs cunvEs (TA = 25 0C unless otherwise noted)
ivan
g T J : T J Max— 3 5.3 ms Single HaIrSine—Wave
§ 1.0 : 25B 05 (3 20 I
D: 0.6 5 15
g 0 4 E 10
o ' 0 II
|L u.
0: x
g 0.2 $ 5
G’ n.
>0 0
<(
0 25 50 75 I00 I25 I50 I75
Ambient Temperature ("C) Number of Cycles at 60 HZ
Fig. 1 — Maximum Forward Current Derating Curve Fig. 2 — Maximum Non—Repetitive Peak Forward Surge Current
Revision: 12-Dec-13 2 Document Number: 88876
For technical questions witl-iin your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.com, DiodesEurope@Vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshav.comzdoo?91000
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