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参数资料
| 型号： | FGY75N60SMD |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IGBT 600V 150A 750W POWER-247 |
| 标准包装： | 150 |
| IGBT 类型： | 场截止 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 150A |
| 功率 - 最大： | 750W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 裸露焊盘 |
| 供应商设备封装： | Power-247 |
| 包装： | 管件 |
| 其它名称： | FGY75N60SMD-ND FGY75N60SMDFS |
November 2013
FGY75N60SMD
600 V, 75 A Field Stop IGBT
Features
? High Current Capability
? Low Saturation Voltage: V CE(sat) = 1.9 V @ I C = 75 A
? High Input Impedance
? Fast Switching : E OFF = 10 uJ/A
? RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series
of field stop 2 nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
Application
? Solar Inverter, UPS, Welder, SMPS, PFC
C
G
G
C
E
Power TO247
(TO-247D03)
E
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Ratings
600
? 20
? 30
Unit
V
V
V
@ T C = 25 C
@ T C = 25 C
@ T C = 25 C
I C
I CM (1)
I F
I FM (1)
P D
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
o
@ T C = 100 o C
o
o
@ T C = 100 o C
@ T C = 25 o C
@ T C = 100 o C
150
75
225
75
50
225
750
375
A
A
A
A
A
A
W
W
T J
T stg
T L
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
-55 to +175
-55 to +175
300
o
o
o
C
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature.
?2010 Fairchild Semiconductor Corporation
FGY75N60SMD Rev. C1
1
www.fairchildsemi.com
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