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参数资料
| 型号： | FLM1314-8F |
| 厂商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段内部匹配场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 299K |
| 代理商： | FLM1314-8F |
1
Edition 1.1
August 2004
FLM1314-8F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
45.5
-65 to +175
175
Tc = 25°C
V
W
°C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
3900
5900
-
3900
-
-0.5
-1.5
-3.0
-5.0
-
5.0
6.0
-
-28
-
38.5
39.0
-
VDS = 5V, IDS = 196mA
VDS = 5V, IDS = 2400mA
VDS = 5V, VGS = 0V
IGS = -196A
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 13.75 ~ 14.5 GHz,
ZS=ZL=50 ohm
f = 14.5GHz,
f = 10 MHz
2-Tone Test
Pout = 28.0dBm S.C.L.
mA
mS
V
dB
%
-42
-45
-
dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
2400
3000
mA
Idsr
IM3
ηadd
Gain Flatness
--
±0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
Channel to Case
Thermal Resistance
-
2.8
3.3
°C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IA
10V x Idsr x Rth
Channel Temperature Rise
-
80
°C
Tch
DESCRIPTION
The FLM1314-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
FEATURES
High Output Power: P1dB = 39.0dBm (Typ.)
High Gain: G1dB = 6.0dB (Typ.)
High PAE:
ηadd = 28% (Typ.)
Low IM3 = -45dBc@Po = 28.0dBm
Broad Band: 13.75 ~ 14.5GHz
Impedance Matched Zin/Zout = 50
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| FLM1414-4F | Internally Matched Power GaAs FET |
| FLM1414-8F | Internally Matched Power GaAs FET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FLM14/10 | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM1414-12F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1414-15F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 4200mA, Bulk |
| FLM1414-3F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 825mA, Bulk |
| FLM1414-4F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
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