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参数资料
| 型号： | FMG8N |
| 英文描述： | N-Channel NexFET™ Power MOSFET 8-SON -55 to 150 |
| 中文描述： | 晶体管| 100mA的一（c）|的TSOP |
| 文件页数： | 2/2页 |
| 文件大小： | 34K |
| 代理商： | FMG8N |
EMG8 / UMG8N / FMG8A
Transistors
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
II
R1
GI
R2/R1
Min.
1.3
3.29
80
8
0.1
4.7
10
0.5
0.3
1.8
0.5
6.11
12
V
VCC=5V, IO=100
A
VO
=0.3V, IO=5mA
IO
=5mA, II=0.25mA
VI
=5V
VCC
=50V, VI=0V
VO
=5V, IO=10mA
V
mA
A
k
Typ.
Max.
Unit
Conditions
VI (off)
VI (on)
VO (on)
IO (off)
fT
250
VCE
=10mA, IE=
5mA, f=100MHz
MHz
Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
Packaging specifications
Package
Code
TR
T148
3000
Taping
Basic ordering
unit (pieces)
UMG8N
T2R
8000
EMG8
FMG8A
Type
Electrical characteristic curves
VO=0.3V
100
200 500 1m 2m
5m 10m 20m
50m100m
100
50
20
10
5
2
1
500m
200m
100m
INPUT
VOLTAGE
:
V
I(on)
(V)
OUTPUT CURRENT : IO
(A)
25C
100C
Ta=
40C
Fig.1 Input voltage vs. output current
(ON characteristics)
VCC=5V
0.5
1.0
1.5
2.0
2.5
3.0
0
10m
5m
2m
1m
500
200
100
50
20
10
5
1
2
INPUT VOLTAGE : VI (off)
(V)
OUTPUT
CURRENT
:
Io
(A)
Ta=100C
25C
40C
Fig.2 Output current vs. input voltage
(OFF characteristics)
VO=5V
100
200 500 1m 2m
5m 10m 20m
50m100m
1k
500
200
100
50
20
10
5
2
1
OUTPUT CURRENT : IO
(A)
DC
CURRENT
GAIN
:
G
I
Ta=100C
25C
40C
Fig.3 DC current gain vs. output
current
100
200 500 1m 2m
5m 10m 20m
50m100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
lO/lI=20
OUTPUT CURRENT : IO
(A)
OUTPTUT
VOLTAGE
:
V
O
(on)
(V)
Ta=100C
25C
40C
Fig.4 Output voltage vs. output
current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FMG9 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SOT-25 |
| FMG9A | 制造商:ROHM Semiconductor 功能描述:DIVIDER TYPE NPNx2 SM DIGITAL TRANSISTOR SMT5 / 6 - free partial T/R at 500. 制造商:ROHM Semiconductor 功能描述:Semiconductor(Discrete),FMG9AT148,Trans |
| FMG9AT148 | 功能描述:开关晶体管 - 偏压电阻器 DUAL NPN 50V 50MA RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| FMG9AT248 | 制造商:ROHM Semiconductor 功能描述:TRANS DIGITAL BJT NPN 100MA 5-PIN SMT T/R; 10K REEL - Tape and Reel 制造商:ROHM Semiconductor 功能描述:IC COMPLEX TRANSISTOR SMT5 制造商:ROHM Semiconductor 功能描述:TRANS DIGI BJT NPN 100MA 5PIN |
| FMGA-461 | 制造商:CRANE 制造商全称:CRANE 功能描述:EMI INPUT FILTER 28 VOLT INPUT SURFACE MOUNT |
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