参数资料
型号: FMP36-015P
厂商: IXYS
文件页数: 4/4页
文件大小: 0K
描述: MOSFET MOD N/P-CH 150V I4-PAC
标准包装: 25
系列: Polar™
FET 型: N 和 P 沟道
FET 特点: 标准
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 36A,22A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 31A,10V
Id 时的 Vgs(th)(最大): 5.5V @ 250µA
闸电荷(Qg) @ Vgs: 70nC @ 10V
输入电容 (Ciss) @ Vds: 2250pF @ 25V
功率 - 最大: 125W
安装类型: 通孔
封装/外壳: i4-Pac?-5
供应商设备封装: ISOPLUS i4-PAC?
包装: 管件
FMP36-015P
Source-Drain Diode
Symbol Test Conditions 3
Characteristic Values
T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = 62A, V GS = 0V, Note 1
I F = 25A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
150
2.0
36
150
1.5
A
A
V
ns
μ C
Note 1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
IXYS reserves the right to change limits, test conditions, and dimensions.
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