参数资料
型号: FMP76-010T
厂商: IXYS
文件页数: 1/4页
文件大小: 0K
描述: MOSFET MOD N/P-CH 100V I4-PAC
标准包装: 25
系列: Trench™
FET 型: N 和 P 沟道
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 62A,54A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 104nC @ 10V
输入电容 (Ciss) @ Vds: 5080pF @ 25V
功率 - 最大: 89W,132W
安装类型: 通孔
封装/外壳: i4-Pac?-5
供应商设备封装: ISOPLUS i4-PAC?
包装: 管件
Advance Technical Information
Trench TM P & N-Channel
Power MOSFET
Common Drain Topology
FMP76-01T
4 3
5
3 4
1 1
T1
T2
V DSS
I D25
R DS(on)
t rr(typ)
P CH.
- 100V
- 54A
24m Ω
70ns
N CH.
100V
62A
11m Ω
67ns
2 2
ISOPLUS i4-Pak TM
Symbol
Test Conditions
Maximum Ratings
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
V ISOLD
T L
T SOLD
50/60H Z , RMS, t = 1min, leads-to-tab
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
2500
300
260
~V
° C
° C
1
5
Isolated Tab
F C
Mounting force
20..120 / 4.5..27
N/lb.
Features
Symbol
C P
Test Conditions
Coupling capacitance between shorted
pins and mounting tab in the case
Characteristic Values
Min. Typ. Max.
40 pF
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
d S ,d A
d S ,d A
Weight
pin - pin
pin - backside metal
1.7
5.5
9
mm
mm
g
Avalanche rated
Low Q G
Low Drain-to-Tab capacitance
Low package inductance
P - CHANNEL
Advantages
Low gate drive requirement
Symbol
Test Conditions
Maximum Ratings
High power density
V DSS
V DGR
V GSS
V GSM
I D25
I DM
I A
E AS
P D
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
- 100
- 100
± 20
± 30
- 54
- 230
- 38
1.0
132
V
V
V
V
A
A
A
J
W
Low drain to ground capacitance
Fast switching
Applications
DC and AC motor drives
Class AB audio amplifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
? 2008 IXYS CORPORATION, All rights reserved
DS100037(09/08)
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