参数资料
型号: FMP76-010T
厂商: IXYS
文件页数: 4/4页
文件大小: 0K
描述: MOSFET MOD N/P-CH 100V I4-PAC
标准包装: 25
系列: Trench™
FET 型: N 和 P 沟道
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 62A,54A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 104nC @ 10V
输入电容 (Ciss) @ Vds: 5080pF @ 25V
功率 - 最大: 89W,132W
安装类型: 通孔
封装/外壳: i4-Pac?-5
供应商设备封装: ISOPLUS i4-PAC?
包装: 管件
FMP76-01T
Source-Drain Diode
Symbol Test Conditions 3
Characteristic Values
T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
I RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = 25A, V GS = 0V, Note 1
I F = 25A, -di/dt = 100A/ μ s
V R = 50V, V GS = 0V
67
160
4.7
62
350
1.0
A
A
V
ns
nC
A
Note 1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
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