参数资料
型号: FMP76-010T
厂商: IXYS
文件页数: 3/4页
文件大小: 0K
描述: MOSFET MOD N/P-CH 100V I4-PAC
标准包装: 25
系列: Trench™
FET 型: N 和 P 沟道
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 62A,54A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 104nC @ 10V
输入电容 (Ciss) @ Vds: 5080pF @ 25V
功率 - 最大: 89W,132W
安装类型: 通孔
封装/外壳: i4-Pac?-5
供应商设备封装: ISOPLUS i4-PAC?
包装: 管件
FMP76-01T
N - CHANNEL
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSM
I D25
I DM
I A
E AS
P D
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
100
100
± 20
62
300
65
500
89
V
V
V
A
A
A
mJ
W
Symbol Test Conditions 2
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BV DSS
V GS = 0V, I D = 250 μ A
100
V
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0V
2.5
4.5
± 200
V
nA
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 25A, (Note 1)
T J = 150 ° C
5 μ A
250 μ A
11 m Ω
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10V, I D = 60A, (Note 1)
V GS = 0V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 V DSS , I D = 25A
R G = 5 Ω (External)
55
93
5080
635
95
30
47
44
28
104
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10V, V DS = 0.5
V DSS , I D = 25A
30
29
nC
nC
R thJC
1.4 ° C/W
R thCS
? 2008 IXYS CORPORATION, All rights reserved
0.15
° C/W
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