参数资料
型号: FNA40860
厂商: Fairchild Semiconductor
文件页数: 6/15页
文件大小: 0K
描述: MOD SPM 600V 8A SPM26-AA
标准包装: 12
系列: SPM™
类型: IGBT
配置: 三相反相器
电流: 8A
电压: 600V
电压 - 隔离: 2000Vrms
封装/外壳: SPM26-AA
Electrical Characteristics (T J = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V CE(SAT)
Collector - Emitter Saturation V CC = V BS = 15 V
I C = 8 A, T J = 25°C
-
1.7
2.2
V
Voltage
V IN = 5 V
V F
FWDi Forward Voltage
V IN = 0 V
I F = 8 A, T J = 25°C
-
1.7
2.2
V
HS
t ON
t C(ON)
t OFF
Switching Times
V PN = 300 V, V CC = V BS = 15 V, I C = 8 A
T J = 25°C
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
0.45
-
-
0.75
0.20
0.80
1.25
0.45
1.30
? s
? s
? s
t C(OFF)
t rr
-
-
0.30
0.15
0.55
-
? s
? s
LS
t ON
t C(ON)
t OFF
t C(OFF)
t rr
I CES
V PN = 300 V, V CC = V BS = 15 V, I C = 8 A
T J = 25°C
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
Collector - Emitter Leakage V CE = V CES
0.45
-
-
-
-
-
0.75
0.20
0.80
0.30
0.15
-
1.25
0.45
1.30
0.55
-
1
? s
? s
? s
? s
? s
mA
Current
2nd Notes:
3. t ON and t OFF include the propagation delay of the internal drive IC. t C(ON) and t C(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% I C 100% I C
t rr
V IN
t ON
V CE
10% I C
t C(ON)
I C
V IN
t OFF
I C
t C(OFF)
V CE
V IN(ON)
90% I C
10% V CE
V IN(OFF)
10% V CE
10% I C
(a) turn-on
(b) turn-off
Figure 4. Switching Time Definition
?2013 Fairchild Semiconductor Corporation
FNA40860 Rev. C3
6
www.fairchildsemi.com
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