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| 型号： | FNB40560 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 11/15页 |
| 文件大小： | 0K |
| 描述： | MOD SPM 600V 5A SPM26-AA |
| 标准包装： | 12 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 5A |
| 电压： | 600V |
| 电压 - 隔离： | 2000Vrms |
| 封装/外壳： | SPM26-AA |
Time Charts of Protective Function
Input Signal
Protection
Circuit State
RESET
SET
RESET
UV CCR
Control
Supply Voltage
a1
UV CCD
a2
a3
a4
a6
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: after the voltage rises UV CCR , the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UV CCD ).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UV CCR ).
a7 : Normal operation: IGBT ON and carrying current.
Figure 11. Under-Voltage Protection (Low-Side)
Input Signal
Protection
Circuit State
RESET
SET
RESET
UV BSR
Control
Supply Voltage
b1
UV BSD
b2
b3
b4
b5
b6
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: after the voltage reaches UV BSR , the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UV BSD ).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UV BSR ).
b6 : Normal operation: IGBT ON and carrying current.
Figure 12. Under-Voltage Protection (High-Side)
?2011 Fairchild Semiconductor Corporation
FNB40560 Rev. C3
11
www.fairchildsemi.com
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PDF描述 |
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相关代理商/技术参数 |
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| FNB40560B2 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module |
| FNB41060 | 功能描述:IGBT 模块 Smart Power Module Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FNB41060B2 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FNB41560 | 功能描述:IGBT 晶体管 Motion SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FNB41560_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:FNB41560 Is A Motion SPM 45 Series that Fairchild Has Newly Developed to Provide A Very Compact and High... |
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