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参数资料
| 型号： | FNB40560 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | MOD SPM 600V 5A SPM26-AA |
| 标准包装： | 12 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 5A |
| 电压： | 600V |
| 电压 - 隔离： | 2000Vrms |
| 封装/外壳： | SPM26-AA |
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Pin Name
V TH
R TH
P
U
V
W
N U
N V
N W
C SC
V FO
IN (WL)
IN (VL)
IN (UL)
COM
V CC(L)
V CC(H)
IN (WH)
IN (VH)
IN (UH)
V S(W)
V B(W)
V S(V)
V B(V)
V S(U)
V B(U)
Pin Description
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
Positive DC-Link Input
Output for U-Phase
Output for V-Phase
Output for W-Phase
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
Fault Output
Signal Input for Low-Side W-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side U-Phase
Common Supply Ground
Low-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Common Bias Voltage for IC and IGBTs Driving
Signal Input for High-Side W-Phase
Signal Input for High-Side V-Phase
Signal Input for High-Side U-Phase
High-Side Bias Voltage Ground for W-Phase IGBT Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for V-Phase IGBT Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
High-Side Bias Voltage for U-Phase IGBT Driving
?2011 Fairchild Semiconductor Corporation
FNB40560 Rev. C3
3
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FNB41060 | MOD SPM 600V 10A SPM26-AA |
| FNB41560B2 | MODULE SPM ADV 600V 15A SPM26 |
| FNB41560 | MOD ADV SMART POWER SPM26-AA |
| FP10-1200 | TRANSF 5VAC 2.4A FLAT PACK PWR |
| FP10-250 | TRANSF 5VAC .5A FLAT PACK PWR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FNB40560B2 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Smart Power Module |
| FNB41060 | 功能描述:IGBT 模块 Smart Power Module Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FNB41060B2 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FNB41560 | 功能描述:IGBT 晶体管 Motion SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FNB41560_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:FNB41560 Is A Motion SPM 45 Series that Fairchild Has Newly Developed to Provide A Very Compact and High... |
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