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| 型号： | FOD3184TSR2 |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 1/23页 |
| 文件大小： | 0K |
| 描述： | OPTO MOSFET/IGBT GATE DVR 8SMD |
| 标准包装： | 1 |
| 电压 - 隔离： | 5000Vrms |
| 通道数： | 1，单向 |
| 电流 - 输出 / 通道： | 3A |
| 传输延迟高 - 低 @ 如果： | 145ns @ 10mA |
| 电流 - DC 正向(If)： | 25mA |
| 输入类型： | DC |
| 输出类型： | 栅极驱动器 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，鸥翼型 |
| 供应商设备封装： | 8-SMD |
| 包装： | 标准包装 |
| 其它名称： | FOD3184TSR2FSDKR |
February 2011
FOD3184
3A Output Current, High Speed MOSFET/IGBT
Gate Driver Optocoupler
Features
Applications
■ High noise immunity characterized by 50kV/μs (Typ.)
common mode rejection @ V CM = 2,000V
■
■
Plasma Display Panel
High performance DC/DC convertor
■
■
Guaranteed operating temperature range of
-40°C to +100°C
3A peak output current for medium power
■
■
■
High performance switch mode power supply
High performance uninterruptible power supply
Isolated Power MOSFET/IGBT gate drive
MOSFET/IGBT
■
■
■
■
■
■
■
Fast switching speed
– 210ns max. propagation delay
– 65ns max pulse width distortion
Fast output rise/fall time
– Offers lower dynamic power dissipation
250kHz maximum switching speed
Wide V DD operating range from 15V to 30V
Use of P-Channel MOSFETs at output stage
enables output voltage swing close to the supply rail
(rail-to-rail output)
Under voltage lockout protection (UVLO) with
hysteresis – optimized for driving IGBTs
Safety and regulatory approvals
– UL1577, 5,000 VAC RMS for 1 min.
– DIN EN/IEC 60747-5-2, 1,414 peak working
insulation voltage
? Minimum creepage distance of 8.0mm
? Minimum clearance distance of 8mm to 16mm
(option TV or TSV)
? Minimum insulation thickness of 0.5mm
Description
The FOD3184 is a 3A Output Current, High Speed
MOSFET/IGBT Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETS/IGBT used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
Functional Block Diagram
NC 1
8 V DD
Package Outlines
8
8
Note:
ANODE 2
CATHODE 3
NC 4
7 V O2
6 V O1
5 V SS
1
8
1
1
8
1
A 0.1μF bypass capacitor must be connected between pins 5 and 8.
?2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
www.fairchildsemi.com
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| FOD3184TSR2V | 功能描述:功率驱动器IC High Speed 3A OUT MOSFET/IGBT GateDrvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FOD3184TSV | 功能描述:功率驱动器IC 3A Out, Hi-Speed Gate Drvr Optocouplr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FOD3184TV | 功能描述:功率驱动器IC 3A Out, Hi-Speed Gate Drvr Optocouplr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FOD3184V | 功能描述:功率驱动器IC 3A Out, Hi-Speed Gate Drvr Optocouplr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FOD410 | 功能描述:三极与 SCR 输出光电耦合器 Random Phase Snubberless Triac RoHS:否 制造商:Vishay Semiconductors 输出设备:PhotoTriac 每芯片的通道数量: 绝缘电压:3750 Vrms 正向电流:10 mA 正向电压:1.2 V 最大触发电流:10 mA 关断状态下输出电压-VDRM:600 V 最大连续输出电流: 零交叉电路: 封装:Reel |
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