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参数资料
| 型号： | FQA13N50CF_F109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 15A TO-3P |
| 标准包装： | 450 |
| 系列： | FRFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 480 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 56nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2055pF @ 25V |
| 功率 - 最大： | 218W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
December 2013
FQA13N50CF
N-Channel QFET ? FRFET ? MOSFET
500 V, 15 A, 480 m?
Features
? 15 A, 500 V, R DS(on) = 48 0 m ? (Max.) @ V GS = 10 V ,
I D = 7.5 A
? Low G ate C harge ( T yp . 43 nC)
? Low C rss ( T yp . 20 pF)
? 100% A valanche T ested
? Fast R ecovery B ody D iode ( T yp . 100 ns)
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA13N50CF
500
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
15
9.5
A
A
I DM
Drain Current
- Pulsed
(Note 1)
60
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' " from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
860
15
21.8
4.5
218
1.56
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQA13N50CF
0.58
0.24
40
Unit
°C / W
°C / W
°C / W
?2007 Fairchild Semiconductor Corporation
FQA13N50CF Rev C1
1
www.fairchildsemi.com
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| FQA13N80 | 功能描述:MOSFET TO-3P N-CH 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FQA13N80_F109 | 功能描述:MOSFET TO-3P N-CH 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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