参数资料
型号: FQD11P06TM
厂商: Fairchild Semiconductor
文件页数: 8/9页
文件大小: 0K
描述: MOSFET P-CH 60V 9.4A DPAK
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
系列: QFET™
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 9.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 185 毫欧 @ 4.7A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 17nC @ 10V
输入电容 (Ciss) @ Vds: 550pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252-3
包装: 标准包装
其它名称: FQD11P06TMDKR
Mechanical Dimensions
Figure 17 . TO251 (I-PAK), Molded, 3-Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003
?2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C 2
8
www.fairchildsemi.com
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