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参数资料
| 型号： | FQD12N20LTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 9A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 280 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1080pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FQD12N20LTMDKR |
January 201 4
FQD12N20L
N-Channel QFET ? MOSFET
200 V, 9.0 A, 280 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
? 9.0 A, 2 00 V, R DS(on) = 28 0 m ? (Max.) @ V GS = 10 V,
I D = 4.5 A
? Low Gate Charge (Typ. 16 nC)
? Low Crss (Typ. 17 pF)
? 100% Avalanche Tested
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD12N20LTM
200
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
9.0
5.7
A
A
I DM
Drain Current
- Pulsed
(Note 1)
36
A
V GSS
Gate-Source Voltage
± 20
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8 " from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
210
9.0
5.5
5.5
2.5
55
0.44
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (*1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQD12N20LTM
2. 27
110
50
Unit
o C/W
?200 9 Fairchild Semiconductor Corporation
FQD12N20L Rev. C 2
1
www.fairchildsemi.com
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| 206-4ST | SWITCH SPST GOLD SEALED 4 SEC |
| 196P6S36 | CABLE STR 6POS MALE-FEMALE 3' |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQD12N20LTM_F085 | 功能描述:MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD12N20TF | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD12N20TM | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD12N20TM_F080 | 功能描述:MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD12P10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET |
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