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参数资料
| 型号： | FQD13N06LTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 11A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 115 毫欧 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FQD13N06LTMDKR |
October 2013
FQD13N06L / FQU13N06L
N-Channel QFET ? MOSFET
60 V, 11 A, 115 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? 11 A, 60 V, R DS(on) = 115 m ? (Max) @ V GS = 10 V,
I D = 5.5 A
? Low Gate Charge (Typ. 4.8 nC)
? Low Crss (Typ. 17 pF)
? 100% Avalanche Tested
? Low Level Gate Drive Requirements Allowing
Direct Operation form Logic Drivers
D
D
G
S
D-PAK
G
D
S
I-PAK
G
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD13N06L TM / FQU13N06L TU
FQU13N06LTU_WS
60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
11
7
A
A
I DM
Drain Current
- Pulsed
(Note 1)
44
A
V GSS
Gate-Source Voltage
± 20
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 " from Case for 5 Seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
90
11
2.8
7.0
2.5
28
0.22
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (*1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQD13N06LTM
FQU13N06LTU
FQU13N06LTU_WS
4 .5
110
50
Unit
o C/W
?2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. C3
1
www.fairchildsemi.com
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