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参数资料
| 型号： | FQD17P06TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 12A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 135 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FQD17P06TMDKR |
December 2013
FQD17P06 / FQU17P06
P-Channel QFET ? MOSFET
-60 V, -12 A, 135 mΩ
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
Features
? -12 A, -60 V, R DS(on) = 135 m ? (Max.) @ V GS = -10 V, I D = - 6 A
? Low Gate Charge (Typ. 21 nC)
? Low Crss (Typ. 80 pF)
? 100% Avalanche Tested
D
D
G
S
D-PAK
G
D
S
I-PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD17P06 / FQU17P06
-60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-12
-7.6
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-48
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
300
-12
4.4
-7.0
2.5
44
0.35
mJ
A
mJ
V/ns
W
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds .
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in 2 Pad of 2-oz Copper), Max.
FQD17P06 / FQU17P06
2.85
110
50
Unit
°C / W
* When mounted on the minimum pad size recommended (PCB Mount)
?2001 Fairchild Semiconductor Corporation
FQD17P06 / FQU17P06 Rev C2
1
www.fairchildsemi.com
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