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参数资料
| 型号： | FQD8P10TF_NB82052 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 6.6A DPAK |
| 标准包装： | 2,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 530 毫欧 @ 3.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 470pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
November 2013
FQD8P10 / FQU8P10
P-Channel QFET ? MOSFET
-10 0 V, -6.6 A, 530 m?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? -6.6 A, -100 V, R DS(on) = 530 m ? (Max) @ V GS = - 10 V,
I D = -3.3 A
? Low Gate Charge (Typ. 12 nC)
? Low Crss (Typ. 30 pF)
? 100% Avalanche Tested
S
D
G
S
D-PAK
G
D
S
I-PAK
G
D
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD8P10 TM / FQU8P10 TU
-100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-6.6
-4.2
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-26.4
A
V GSS
Gate-Source Voltage
? 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
150
-6.6
4.4
-6.0
2.5
44
0.35
mJ
A
mJ
V/ns
W
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (*1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQD8P10TM
FQU8P10TU
2.84
110
50
Unit
o C/W
?2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
1
www.fairchildsemi.com
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