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参数资料
| 型号： | FQI27P06TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 27A I2PAK |
| 标准包装： | 1,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
October 2013
FQB27P06
P-Channel QFET ? MOSFET
-60 V, -27 A, 70 m ?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
? - 2 7 A, - 6 0 V, R DS(on) = 70 m ? (Max) @V GS = - 10 V,
I D = - 13.5 A
? Low Gate Charge ( Typ. 33 nC)
? Low Crss ( Typ. 12 0 pF)
? 100% Avalanche Tested
? 175 ° C Maximum Junction Temperature Rating
S
D
G
G
S
D 2 -PAK
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQB27P06 TM
-60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-27
-19.1
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-108
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
560
-27
12
-7.0
3.75
120
0.8
mJ
A
mJ
V/ns
W
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +175
300
°C
°C
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max .
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient ( * 1 in 2 pad of 2 oz copper), Max.
FQB27P06 TM
1.25
62.5
40
Unit
o C/W
? 2000 Fairchild Semiconductor Corporation
FQB27P06 Rev. C 1
1
www.fairchildsemi.com
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