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| 型号： | FQP10N20CTSTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 9.5A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 360 毫欧 @ 4.75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 510pF @ 25V |
| 功率 - 最大： | 72W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
November 2013
FQP10N20C / FQPF10N20C
N-Channel QFET ? MOSFET
200 V, 9.5 A, 360 m Ω
Features
? 9.5 A, 200 V, R DS(on) = 360 m ? (Max.) @ V GS = 10 V,
I D = 4.75 A
? Low Gate Charge (Typ. 20 nC)
? Low Crss (Typ. 40.5 pF)
? 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
D
G
S
TO-220
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQP10N20C
FQPF10N20C
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
9.5
6.0
200
9.5 *
6.0 *
V
A
A
I DM
Drain Current
- Pulsed
(Note 1)
38
38 *
A
V GSS
Gate to Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
210
9.5
7.2
5.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
72
0.57
38
0.3
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP10N20C
1.74
62.5
FQPF10N20C
3.33
62.5
Unit
°C / W
°C / W
?2003 Fairchild Semiconductor Corporation
FQP10N20C / FQPF10N20C Rev. C1
1
www.fairchildsemi.com
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