- 您现在的位置：买卖IC网 > Datasheet目录433 > FQP13N10L (Fairchild Semiconductor)MOSFET N-CH 100V 12.8A TO-220 Datasheet资料下载
参数资料
| 型号： | FQP13N10L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 12.8A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 6.4A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 520pF @ 25V |
| 功率 - 最大： | 65W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQP 13 N 10L
Top Mark
FQP13N10L
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol Parameter
?
Off Characteristics
BV DSS Drain-Source Breakdown Voltage
Test Conditions
V GS = 0 V, I D = 250 ? A
Min .
100
Typ .
--
Max .
--
Unit
V
? BV DSS
/ ? T J
I DSS
I GSSF
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
I D = 250 ? A, Referenced to 25°C
V DS = 100 V, V GS = 0 V
V DS = 80 V, T C = 150°C
V GS = 20 V, V DS = 0 V
--
--
--
--
0.09
--
--
--
--
1
10
100
V/°C
? A
? A
nA
I GSSR Gate-Body Leakage Current, Reverse
?
On Characteristics
V GS(th) Gate Threshold Voltage
V GS = -20 V, V DS = 0 V
V DS = V GS , I D = 250 ? A
--
1.0
--
--
-100
2.0
nA
V
R DS(on)
Static Drain-Source
On-Resistance
V GS = 10 V, I D = 6.4 A
V GS = 5 V, I D = 6.4 A
--
0.142
0.158
0.18
0.2
?
g FS Forward Transconductance
?
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
?
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DS = 30 V, I D = 6.4 A
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 50 V, I D = 12.8 A,
R G = 25 ?
(Note 4)
--
--
--
--
--
--
--
--
9.5
400
95
20
7.5
220
22
72
--
520
125
25
25
450
55
150
S
pF
pF
pF
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 80 V, I D = 12.8 A,
V GS = 5 V
(Note 4)
--
--
--
8.7
2.0
5.3
12
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
12.8
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
51.2
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 12.8 A
V GS = 0 V, I S = 12.8 A,
dI F / dt = 100 A/ ? s
--
--
--
--
75
0.17
1.5
--
--
V
ns
? C
Notes:
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 0.87 mH, I AS = 12.8 A, V DD = 25 V, R G = 25 ? s tarting T J = 25° . C
3. I SD ≤ 12.8 A, di/dt ≤ 300 A/ μ s, V DD ≤ BV DSS, s tarting T J = 25°C .
4. Essentially independent of operating temperature .
?2000 Fairchild Semiconductor Corporation
FQP13N10L Rev. C 1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQP13N10 | MOSFET N-CH 100V 12.8A TO-220 |
| FQP14N30 | MOSFET N-CH 300V 14.4A TO-220 |
| FQP16N25C | MOSFET N-CH 250V 15.6A TO-220 |
| FQP16N25 | MOSFET N-CH 250V 16A TO-220 |
| FQP17N40 | MOSFET N-CH 400V 16A TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQP13N50 | 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP13N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FQP13N50C | 功能描述:MOSFET 500V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP13N50C_F105 | 制造商:Fairchild 功能描述:500V/13A N-CH MOSFET C-SERIES |
| FQP13N50CF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。