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| 型号： | FQP17P06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 17A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 8.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 79W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
March 2013
FQP17P06
P-Channel QFET ? MOSFET
- 60 V, - 17 A, 120 m ?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ? ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
? - 17 A, - 60 V, R DS(on) = 120 m ? (Max.) @ V GS = - 10 V,
ID = - 8.5 A
? Low Gate Charge (Typ.21 nC)
? Low Crss (Typ. 80 pF)
? 100% Avalanche Tested
? 175 ? C Maximum Junction Temperature Rating
S
?
G
G ?
●
●
? ▲
●
D
S
TO-220
?
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP17P06
-60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-17
-12
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-68
A
V GSS
Gate-Source Voltage
? 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
300
-17
7.9
-7.0
79
0.53
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +175
300
°C
°C
Thermal Characteristics
Symbol
R ? JC
R ? CS
R ? JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP17P06
1.9
0.5
62.5
Unit
°C / W
°C / W
°C / W
?2001 Fairchild Semiconductor Corporation
FQP17P06 Rev.C0
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FQP17P06 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220 |
| FQP17P06 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CH/60V/17A/0.12OHM |
| FQP17P06_Q | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP17P06TU | 制造商:Fairchild 功能描述:60V/17A P-CH MOSFET |
| FQP17P10 | 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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