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| 型号： | FQP3N80C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 3A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.8 欧姆 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 705pF @ 25V |
| 功率 - 最大： | 107W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 其它名称： | FQP3N80C-ND FQP3N80CFS |
November 2013
FQP3N80C / FQPF3N80C
N-Channel QFET ? MOSFET
800 V, 3.0 A, 4.8 m Ω
Features
? 3.0 A, 800 V, R DS(on) = 4.8 ? (Max.) @ V GS = 10 V,
I D = 1.5 A
? Low Gate Charge (Typ. 13 nC)
? Low Crss (Typ. 5.5 pF)
? 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GD
D
S
TO-220
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQP3N80C
FQPF3N80C
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
3
1.9
800
3*
1.9 *
V
A
A
I DM
Drain Current
- Pulsed
(Note 1)
12
12 *
A
V GSS
Gate to Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
320
3
10.7
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
107
0.85
39
0.31
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP3N80C
1.17
62.5
FQPF3N80C
3.2
62.5
Unit
°C / W
°C / W
?2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C1
1
www.fairchildsemi.com
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| FQP3N90 | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP3P20 | 功能描述:MOSFET 200V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP3P50 | 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP3P50 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220 |
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