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参数资料
| 型号： | FQP3N80C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 3A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.8 欧姆 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 705pF @ 25V |
| 功率 - 最大： | 107W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 其它名称： | FQP3N80C-ND FQP3N80CFS |
Package Marking and Ordering Information
Device Marking
FQP3N80C
FQPF3N80C
Device
FQP3N80C
FQPF3N80C
Package
TO-220
TO-220F
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 800 V, V GS = 0 V
V DS = 640 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
800
--
--
--
--
--
--
1
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 1.5 A
V DS = 50 V, I D = 1.5 A
3.0
--
--
--
4.0
3
5.0
4.8
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
543
54
5.5
705
70
7.5
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V, I D = 3 A,
R G = 25 Ω
V DS = 640 V, I D = 3 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
15
43.5
22.5
32
13
3.4
5.8
40
95
55
75
16.5
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
3.0
12
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 3.0 A
V GS = 0 V, I S = 3.0 A,
dI F / dt = 100 A/ μ s
--
--
--
--
642
4.0
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 67 mH, I AS = 3.0 A, V DD = 50 V, R G = 25 Ω, starting T J = 25°C.
3. I SD ≤ 3 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C1
2
www.fairchildsemi.com
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