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| 型号： | FQP44N10F |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 43.5A TO-220 |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 43.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 21.75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 62nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 146W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
November 2013
FQP44N10
N-Channel QFET ? MOSFET
100 V, 43.5 A, 39 m Ω
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en-
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.
Features
? 43.5 A, 100 V, R DS(on) = 39 m Ω (Max.) @V GS = 10 V,
I D = 21.75 A
? Low Gate Charge (Typ. 48 nC)
? Low Crss (Typ. 85 pF)
? 100% Avalanche Tested
? 175 ° C Maximum Junction Temperature Rating
D
GD
S
Absolute Maximum Ratings
TO-220
T C = 25°C unless otherwise noted.
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP44N10
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
43.5
30.8
A
A
I DM
Drain Current
- Pulsed
(Note 1)
174
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 " from Case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
530
43.5
14.6
6.0
146
0.97
-55 to +175
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP44N10
1.03
62.5
Unit
°C / W
°C / W
?2000 Fairchild Semiconductor Corporation
FQP44N10 Rev. C1
1
www.fairchildsemi.com
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