- 您现在的位置：买卖IC网 > Datasheet目录434 > FQP55N10 (Fairchild Semiconductor)MOSFET N-CH 100V 55A TO-220 Datasheet资料下载
参数资料
| 型号： | FQP55N10 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 55A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 27.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 98nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2730pF @ 25V |
| 功率 - 最大： | 155W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
November 2013
FQP55N10
N-Channel QFET ? MOSFET
100 V, 55 A, 26 m Ω
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en-
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.
Features
? 55 A, 100 V, R DS(on) = 26 m Ω (Max.) @ V GS = 10 V,
I D = 27.5 A
? Low Gate Charge (Typ. 75 nC)
? Low Crss (Typ. 130 pF)
? 100% Avalanche Tested
? 175 ° C Maximum Junction Temperature Rating
D
GD
S
Absolute Maximum Ratings
TO-220
T C = 25°C unless otherwise noted.
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP55N10
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
55
38.9
A
A
I DM
Drain Current
- Pulsed
(Note 1)
220
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 " from Case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1100
55
15.5
6.0
155
1.03
-55 to +175
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP55N10
0.97
62.5
Unit
°C / W
°C / W
?2000 Fairchild Semiconductor Corporation
FQP55N10 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQP65N06 | MOSFET N-CH 60V 65A TO-220 |
| FQP6N40C | MOSFET N-CH 400V 6A TO-220 |
| FQP6N70 | MOSFET N-CH 700V 6.2A TO-220 |
| FQP70N10 | MOSFET N-CH 100V 57A TO-220 |
| FQP7N80C | MOSFET N-CH 800V 6.6A TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQP58N08 | 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP5N15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5.4A I(D) | TO-220 |
| FQP5N20 | 功能描述:MOSFET 200V N-CH 4.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP5N20L | 功能描述:MOSFET 200V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQP5N30 | 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。