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| 型号： | FQPF16N15 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 11.6A TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 5.8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 910pF @ 25V |
| 功率 - 最大： | 53W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
November 2013
FQPF16N15
N-Channel QFET ? MOSFET
150 V, 11.6 A, 160 m Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
Features
? 11.6 A, 150 V, R DS(on) = 160 m ? (Max.) @ V GS = 10 V,
I D = 5.8 A
? Low Gate Charge (Typ. 23 nC)
? Low Crss (Typ. 30 pF)
? 100% Avalanche Tested
? 175°C Maximum Junction Temperature Rating
power applications.
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF16N15
150
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
11.6
8.2
A
A
I DM
V GSS
Drain Current
Gate-Source Voltage
- Pulsed
(Note 1)
46.4
± 25
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate Above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
230
11.6
5.3
6.0
53
0.36
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
-55 to +175
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF16N15
2.78
62.5
Unit
°C / W
?2000 Fairchild Semiconductor Corporation
FQPF16N15 Rev. C1
1
www.fairchildsemi.com
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