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参数资料
| 型号： | FQPF2N60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 2A TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Passivation Material Change 14/May/2008 |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 235pF @ 25V |
| 功率 - 最大： | 23W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQP 2 N60C
FQPF 2 N60C
Top Mark
FQP2N60C
FQPF2N60C
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS Drain-Source Breakdown Voltage
V GS = 0 V, I D = 250 μ A
600
--
--
V
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
I D = 250 μ A, Referenced to 25°C
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
--
--
--
--
--
0.6
--
--
--
--
--
1
10
100
-100
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
2.0
--
4.0
V
r DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = 10 V, I D = 1 A
V DS = 40 V, I D = 1 A
--
--
3.6
5.0
4.7
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
180
20
4.3
235
25
5.6
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = 300 V, I D = 2 A,
R G = 25 ?
(Note 4)
--
--
--
--
9
25
24
28
28
60
58
66
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 480 V, I D = 2 A,
V GS = 10 V
(Note 4)
--
--
--
8.5
1.3
4.1
12
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
2
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
8
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 2 A,
dI F / dt = 100 A/ μ s
--
--
--
--
230
1.0
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 56 mH, I AS = 2 A, V DD = 50 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ 2 A, di/dt ≤ 200 A/ μ s , V DD ≤ BV DSS, s tarting T J = 25°C .
4. Essentially independent of operating temperature.
?2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
2
www.fairchildsemi.com
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