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| 型号： | FQPF2N70 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 700V 2A TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 700V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.3 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 28W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
November 2013
FQPF2N70
N-Channel QFET ? MOSFET
700 V, 2.0 A, 6.3 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
Features
? 2.0 A, 700 V, R DS(on) = 6.3 ? (Max.) @ V GS = 10 V,
I D = 1.0 A
? Low Gate Charge (Typ. 9 nC)
? Low Crss (Typ. 5 pF)
? 100% Avalanche Tested
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF2N70
700
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
2.0*
1.3*
A
A
I DM
V GSS
Drain Current
Gate-Source Voltage
- Pulsed
(Note 1)
8.0*
± 30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25°C)
- Derate Above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
140
2.0
2.8
4.5
28
0.22
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
-55 to +150
300
°C
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF2N70
4.46
62.5
Unit
°C / W
?2003 Fairchild Semiconductor Corporation
FQPF2N70 Rev. C1
1
www.fairchildsemi.com
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| FQPF2NA90 | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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