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| 型号： | FQPF33N10L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 18A TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 52 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1630pF @ 25V |
| 功率 - 最大： | 41W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 其它名称： | FQPF33N10L-ND FQPF33N10LFS |
November 2013
FQPF33N10L
N-Channel QFET ? MOSFET
100 V, 18 A, 52 m Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
Features
? 18 A, 100 V, R DS(on) = 52 m ? (Max.) @ V GS = 10 V,
I D = 9 A
? Low Gate Charge (Typ. 30 nC)
? Low Crss (Typ. 70 pF)
? 100% Avalanche Tested
? 175°C Maximum Junction Temperature Rating
power applications.
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF33N10L
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
18
12.7
A
A
I DM
Drain Current
- Pulsed
(Note 1)
72
A
V GSS
Gate-Source Voltage
± 20
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
430
18
4.1
6.0
41
0.27
-55 to +175
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF33N10L
3.7
62.5
Unit
°C / W
°C / W
?2000 Fairchild Semiconductor Corporation
FQPF33N10L Rev. C1
1
www.fairchildsemi.com
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