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参数资料
| 型号： | FQPF45N15V2 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 45A TO-TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 45A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 22.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 94nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3030pF @ 25V |
| 功率 - 最大： | 66W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 其它名称： | FQPF45N15V2-ND FQPF45N15V2FS |
October 2013
FQP45N15V2 / FQPF45N15V2
N-Channel QFET ? MOSFET
150 V, 45 A, 40 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? 45 A, 150 V, R DS(on) = 40 m ? (Max.) @ V GS = 10 V ,
I D = 22.5 A
? Low G ate C harge ( T yp . 72 nC)
? Low Crss ( T yp . 135 pF)
? 100% A valanche T ested
D
GD
D
S
TO-220
G
S
TO-220F
G
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP45N15V2
FQPF45N15V2
150
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
45
31
45 *
31 *
A
A
I DM
Drain Current
- Pulsed
(Note 1)
180
180 *
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
220
1.47
1124
45
22
4.5
66
0.44
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQP45N15V2
0.68
0.5
62.5
FQPF45N15V2
2.25
--
62.5
Unit
°C / W
°C / W
°C / W
?2004 Fairchild Semiconductor Corporation
FQP45N15V2 / FQPF45N15V2 Rev. C1
1
www.fairchildsemi.com
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