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参数资料
| 型号： | FRF9150H |
| 厂商： | INTERSIL CORP |
| 元件分类： | JFETs |
| 英文描述： | 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 23 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件页数： | 1/6页 |
| 文件大小： | 49K |
| 代理商： | FRF9150H |
4-1
FRF9150D, FRF9150R,
FRF9150H
23A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFETs
File Number
3243.2
Package
TO-254AA
Symbol
D
S
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specications.
D
S
G
Features
23A, -100V, rDS(ON) = 0.140
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-RAD Specications to 100K RAD (Si)
- Dened End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
Gamma Dot
- Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
Photo Current
- 7.0nA Per-RAD (Si)/s Typically
Neutron
- Pre-RAD Specications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25m
. Total dose hardness
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging
from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
This MOSFET is an enhancement-mode silicon-gate power eld effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specied
FRF9150D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
-100
V
Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
-100
V
Continuous Drain Current
TC = +25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
TC = +100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
23
15
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
69
A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = +25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125
50
1.00
W
W/oC
Inductive Current, Clamped, L = 100
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .ILM
69
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
23
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
69
A
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
-55 to +150
oC
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
Intersil Corporation 1999
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FRF9150R | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9150R3 | 制造商:Harris Corporation 功能描述: |
| FRF9150R4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 23A I(D) | TO-254AA |
| FRF9250D | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9250H | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
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