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参数资料
| 型号： | FRF9150H |
| 厂商： | INTERSIL CORP |
| 元件分类： | JFETs |
| 英文描述： | 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 23 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件页数： | 3/6页 |
| 文件大小： | 49K |
| 代理商： | FRF9150H |
4-3
Post-Radiation Electrical Specications TC = +25oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Notes 4, 6)
BVDSS
FRF9150D, R
VGS = 0, ID = 1mA
-100
-
V
(Notes 5, 6)
BVDSS
FRF9150H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Notes 4, 6)
VGS(TH)
FRF9150D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Notes 3, 5, 6)
VGS(TH)
FRF9150H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Notes 4, 6)
IGSSF
FRF9150D, R
VGS = -20V, VDS = 0
-
100
nA
(Notes 5, 6)
IGSSF
FRF9150H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Notes 2, 4, 6)
IGSSR
FRF9150D, R
VGS = 20V, VDS = 0
-
100
nA
(Notes 2, 5, 6)
IGSSR
FRF9150H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Notes 4, 6)
IDSS
FRF9150D, R
VGS = 0, VDS = -80V
-
25
A
(Notes 5, 6)
IDSS
FRF9150H
VGS = 0, VDS = -80V
-
100
A
Drain-Source
On-State Volts
(Notes 1, 4, 6)
VDS(ON)
FRF9150D, R
VGS = -10V, ID = 23A
-
-3.38
V
(Notes 1, 5, 6)
VDS(ON)
FRF9150H
VGS = -16V, ID = 23A
-
-5.07
V
Drain-Source
On Resistance
(Notes 1, 4, 6)
rDS(ON)
FRF9150D, R
VGS = -10V, ID = 15A
-
0.140
(Notes 1, 5, 6)
rDS(ON)
FRF9150H
VGS = -14V, ID = 15A
-
0.210
NOTES:
1. Pulse test, 300
s (Max)
2. Absolute value
3. Gamma = 300K RAD (Si)
4. Gamma = 10K RAD (Si) for “D”, 100K RAD (Si) for “R”. Neutron = 3E13
5. Gamma = 1000K RAD (Si). Neutron = 3E13
6. In situ Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/18/91 on TA 17751 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRF9150D, FRF9150R, FRF9150H
相关PDF资料 |
PDF描述 |
|---|---|
| FRF9150R | 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9250H | 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9250R | 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRJA-442 | 2 CONTACT(S), FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FRF9150R | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9150R3 | 制造商:Harris Corporation 功能描述: |
| FRF9150R4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 23A I(D) | TO-254AA |
| FRF9250D | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRF9250H | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
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