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| 型号： | FSAM10SH60A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | SMART POWER MODULE 10A SPM32-AA |
| 产品培训模块： | Smart Power |
| 标准包装： | 8 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 10A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM32AA |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
| 其它名称： | FSAM10SH60A_NL FSAM10SH60A_NL-ND |
January 2014
FSAM10SH60A
Motion SPM ? 2 Series
Features
? UL Certified No. E209204 (UL1557)
? 600 V - 10 A 3-Phase IGBT Inverter with Integral
Gate Drivers and Protection
? Low-Loss, Short-Circuit Rated IGBTs
General Description
FSAM10SH60A is a Motion SPM ? 2 module
providing a fully-featured, high-performance inverter
stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
? Low Thermal
Substrate
Resistance
Using
Ceramic
the built-in IGBTs to minimize EMI and losses, while
also providing multiple on-module protection
? Separate Open-Emitter Pins from Low Side IGBTs
for Three-Phase Current Sensing
? Single-Grounded Power Supply
? Optimized for 15 kHz Switching Frequency
features including under-voltage lockouts, over-
current shutdown, thermal monitoring, and fault
reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the
incoming logic-level gate inputs to the high-voltage,
? Built-in NTC
Monitoring
Thermistor
for
Temperature
high-current drive signals required to properly drive
the module's internal IGBTs. Separate negative
IGBT terminals are available for each phase to
? Inverter Power Rating of 0.5 kW / 100~253 VAC
support the widest variety of control algorithms.
? Adjustable Current Protection Level via Selection
of Sense-IGBT Emitter's External Rs
? Isolation Rating: 2500 V rms / min.
Applications
? Motion Control - Home Appliance / Industrial Motor
Resource
? AN-9043 - Motion SPM? 2 Series User's Guide
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSAM10SH60A
Device Marking
FSAM10SH60A
Package
S32AA-032
Packing Type
Rail
Quantity
8
?2003 Fairchild Semiconductor Corporation
FSAM10SH60A Rev. C8
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FSAM15SH60A | SMART POWER MODULE 15A SPM32-AA |
| FSAM15SM60A | SMART POWER MODULE 15A SPM32-AA |
| FSAM20SH60A | SMART POWER MODULE 20A SPM32-AA |
| FSAM20SM60A | SMART POWER MODULE 20A SPM32-AA |
| FSAM30SH60A | SMART POWER MODULE 30A SPM32-AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSAM10SM60A | 功能描述:IGBT 晶体管 600V/10A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SH60 | 功能描述:IGBT 晶体管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SH60A | 功能描述:IGBT 晶体管 600V/15A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SL60 | 功能描述:IGBT 晶体管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SM60 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SPM (Smart Power Module) General Description |
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