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参数资料
| 型号： | FSAM10SH60A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/15页 |
| 文件大小： | 0K |
| 描述： | SMART POWER MODULE 10A SPM32-AA |
| 产品培训模块： | Smart Power |
| 标准包装： | 8 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 10A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM32AA |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
| 其它名称： | FSAM10SH60A_NL FSAM10SH60A_NL-ND |
Electrical Characteristics
Control Part
(T J = 25°C, unless otherwise specified.)
Item
Symbol
Condition
Min.
Typ. Max. Unit
Quiescent V CC
I QCCL
V CC = 15 V
V CC(L) - COM (L)
-
- 26 mA
Supply Current
IN (UL, VL, WL) = 5V
I QCCH
V CC = 15 V
V CC(UH) , V CC(VH) , V CC(WH) -
-
-
130
? A
IN (UH, VH, WH) = 5V
COM (H)
Quiescent V BS
I QBS
V BS = 15 V
V B(U) - V S(U) , V B(V) -V S(V) ,
-
-
420
? A
Supply Current
IN (UH, VH, WH) = 5V
V B(W) - V S(W)
Fault Output Voltage
Short-Circuit Trip Level
Sensing Voltage
V FOH
V FOL
V SC(ref)
V SEN
V SC = 0 V, V FO Circuit: 4.7 k ? to 5 V Pull-up
V SC = 1 V, V FO Circuit: 4.7 k ? to 5 V Pull-up
V CC = 15 V (2nd Note 5)
R SC = 50 ? , R SU = R SV = R SW = 0 ?? and I C = 15 A
4.5
-
0.45
0.45
-
-
0.51
0.51
-
1.1
0.56
0.56
V
V
V
V
of IGBT Current
(See a Figure 6)
Supply Circuit Under-
Voltage Protection
Fault Output Pulse Width
UV CCD
UV CCR
UV BSD
UV BSR
t FOD
Detection Level
Reset Level
Detection Level
Reset Level
C FOD = 33 nF (2nd Note 6)
11.5
12.0
7.3
8.6
1.4
12.0
12.5
9.0
10.3
1.8
12.5
13.0
10.8
12.0
2.0
V
V
V
V
ms
ON Threshold Voltage
OFF Threshold Voltage
ON Threshold Voltage
V IN(ON)
V IN(OFF)
V IN(ON)
High-Side
Low-Side
Applied between IN (UH) ,
IN (VH) , IN (WH) - COM (H)
Applied between IN (UL) ,
-
3.0
-
-
-
-
0.8
-
0.8
V
V
V
OFF Threshold Voltage
Resistance of Thermistor
V IN(OFF)
R TH
IN (VL) , IN (WL) - COM (L)
@ T TH = 25°C (2nd Note 7, Figure 5)
@ T TH = 100°C (2nd Note 7, Figure 5)
3.0
-
-
-
50
3.4
-
-
-
V
k ?
k ?
2nd Notes:
5. Short-circuit protection is functioning only at the low-sides. It would be recommended that the value of the external sensing resistor (R SC ) should be selected
around 50 ? in order to make the SC trip-level of about 15A at the shunt resistors (R SU , R SV , R SW ) of 0 ? ? . For the detailed information about the relationship
between the external sensing resistor (R SC ) and the shunt resistors (R SU , R SV , R SW ), please see Figure 6.
6. The fault-out pulse width t FOD depends on the capacitance value of C FOD according to the following approximate equation: C FOD = 18.3 x 10 -6 x t FOD [F]
7. T TH is the temperature of thermistor itself. To know case temperature (T C ), please make the experiment considering your application.
R-T Curve
70k
60k
50k
40k
30k
20k
10k
0
20
30
40
50
60
70
80
90
100
110
120
Temperature T TH [ ℃ ]
Figure 5. R-T Curve of The Built-in Thermistor
?2003 Fairchild Semiconductor Corporation
FSAM10SH60A Rev. C8
7
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FSAM10SM60A | 功能描述:IGBT 晶体管 600V/10A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SH60 | 功能描述:IGBT 晶体管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SH60A | 功能描述:IGBT 晶体管 600V/15A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SL60 | 功能描述:IGBT 晶体管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSAM15SM60 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SPM (Smart Power Module) General Description |
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