参数资料
型号: FSAM30SM60A
厂商: Fairchild Semiconductor
文件页数: 5/15页
文件大小: 0K
描述: SMART POWER MODULE 30A SPM32-AA
产品培训模块: Smart Power
标准包装: 8
系列: SPM™
类型: IGBT
配置: 3 相
电流: 30A
电压: 600V
电压 - 隔离: 2500Vrms
封装/外壳: SPM32AA
产品目录页面: 1222 (CN2011-ZH PDF)
其它名称: FSAM30SM60A_NL
FSAM30SM60A_NL-ND
Absolute Maximum Ratings (T J = 25°C,
Inverter Part
unless otherwise specified.)
Item
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Symbol
V DC
V PN(Surge)
V CES
± I C
± I C
± I CP
P C
T J
Condition
Applied to DC-Link
Applied between P and N
T C = 25°C
T C = 100°C
T C = 25°C , Under 1ms Pulse Width
T C = 25°C per Chip
(2nd Note 1)
Rating
450
500
600
30
16
60
62
-20 ~ 125
Unit
V
V
V
A
A
A
W
°C
2nd Notes:
1. It would be recommended that the average junction temperature should be limited to T J ? 125 ? C (at T C ? 100 ? C) in order to guarantee safe operation.
Control Part
Item
Symbol Condition
Rating
Unit
Control Supply Voltage
V CC
Applied between V CC(UH) , V CC(VH) , V CC(WH) -
20
V
COM (H) , V CC(L) - COM (L)
High-Side Control Bias Voltage
V BS
Applied between V B(U) - V S(U) , V B(V) - V S(V) , V B(W) -
20
V
V S(W)
Input Signal Voltage
V IN
Applied between IN (UH) , IN (VH) , IN (WH) - COM (H)
-0.3 ~ V CC +0.3
V
IN (UL) , IN (VL) , IN (WL) - COM (L)
Fault Output Supply Voltage
Fault Output Current
Current-Sensing Input Voltage
V FO
I FO
V SC
Applied between V FO - COM (L)
Sink Current at V FO Pin
Applied between C SC - COM (L)
-0.3 ~ V CC +0.3
5
-0.3 ~ V CC +0.3
V
mA
V
Total System
Item
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Symbol Condition
V PN(PROT) Applied to DC-Link,
V CC = V BS = 13.5 ~ 16.5 V
T J = 125°C, Non-Repetitive, < 6 ? s
Rating
400
Unit
V
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
T C
T STG
V ISO
See Figure 2
60Hz, Sinusoidal, AC 1 Minute, Connect
-20 ~ 100
-20 ~ 125
2500
°C
°C
V rms
Pins to Heat Sink Plate
Thermal Resistance
Item
Junction to Case Thermal
Symbol
R th(j-c)Q
Condition
Inverter IGBT Part (per 1/6 module)
Min. Typ.
- -
Max.
2.00
Unit
°C/W
Resistance
Contact Thermal
R th(j-c)F
R th(c-f)
Inverter FWDi Part (per 1/6 module)
Ceramic Substrate (per 1 Module)
-
-
-
-
3.20
0.06
°C/W
°C/W
Resistance
Thermal Grease Applied (2nd Note 3)
2nd Notes:
2. For the measurement point of case temperature(T C ), please refer to Figure 2.
3. The thickness of thermal grease should not be more than 100 ? m.
?2003 Fairchild Semiconductor Corporation
FSAM30SM60A Rev. C8
5
www.fairchildsemi.com
相关PDF资料
PDF描述
FSAM50SM60A IC SMART PWR MODULE SPM32-CA
FSAM75SM60A IC SMART PWR MODULE SPM32-CA
FSB32560 MODULE SPM 600V 25A 27SPMBA
FSB50250S IC SMART POWER MOD 2A SPM23-BA
FSB50250UD MOD SPM 500V 1.1A SPM23-HD
相关代理商/技术参数
参数描述
FSAM30SM60SL 功能描述:IGBT 模块 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSAM50SM60A 功能描述:IGBT 晶体管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FSAM75SM60A 功能描述:IGBT 模块 600V -75A SMART POWER MODULE RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSAM75SM60SL 功能描述:IGBT 模块 600V/75A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSAP502Y 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 50UMINTER 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 50UMINTERCONNECT CA - Cable Rools/Shrink Tubing