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| 型号： | FSB50250UTD |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOD SPM 500V 1.1A SPM23-ED |
| 标准包装： | 15 |
| 系列： | SPM™ |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 1.1A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23ED |
Absolute Maximum Ratings
Inverter Part (each MOSFET unless otherwise specified.)
Symbol
V DSS
*I D 25
*I D 80
Parameter
Drain-Source Voltage of Each MOSFET
Each MOSFET Drain Current, Continuous T C = 25°C
Each MOSFET Drain Current, Continuous T C = 80°C
Conditions
Rating
500
1.1
0.8
Unit
V
A
A
*I DP
*P D
Each MOSFET Drain Current, Peak
Maximum Power Dissipation
T C = 25°C, PW < 100 ? s
T C = 25°C, For Each MOSFET
2.8
13
A
W
Control Part (each HVIC unless otherwise specified.)
Symbol
V CC
V BS
V IN
Parameter
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Conditions
Applied Between V CC and COM
Applied Between V B and V S
Applied Between IN and COM
Rating
20
20
-0.3 ~ V CC + 0.3
Unit
V
V
V
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Symbol
V RRMB
* I FB
* I FPB
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Conditions
T C = 25°C
T C = 25°C, Under 1ms Pulse Width
Rating
500
0.5
2.0
Unit
V
A
A
Thermal Resistance
Symbol
R ? JC
Parameter
Junction to Case Thermal Resistance
Conditions
Each MOSFET under Inverter Oper-
ating Condition (1st Note 1)
Rating
9.3
Unit
°C/W
Total System
Symbol
T J
T STG
V ISO
Parameter
Operating Junction Temperature
Storage Temperature
Isolation Voltage
Conditions
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
Rating
-40 ~ 150
-40 ~ 125
1500
Unit
°C
°C
V rms
1st Notes:
1. For the measurement point of case temperature T C , please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
?2013 Fairchild Semiconductor Corporation
FSB50250UTD Rev. C4
2
www.fairchildsemi.com
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